NANO PRO™ 6 inch N-type SiC Epitaxial Layer on SiC Substrates, Epi Thickness: 11 um
NANOSSR offers SiC Epitaxial Layer on SiC substrate. They have the advantages of operating under high-voltage, high electric current, and at high temperatures compared to semiconductor devices based on silicon. These unique features of SiC epitaxial wafers lead to the miniaturization of devices, enabling smaller and lighter power control modules to be made. They are often used for power devices (schottky diodes, MOSFETs, JEFTs, BJTs, IGBTs), thyristors for green energy systems (solar inverters), hybridand electric vehicles and numerous other energy-efficient systems.
Typical Specification:
| Substrate | |
| Diameter | 6 inch (150 mm) |
| Thickness | 350um |
| Thickness Tolerance | ± 10% |
| Poly-type | 4H |
| Dopant | N-type |
| Epi Layer | |
| Dopant | Nitrogen |
| Thickness | 11 μm |
| Thickness Tolerance | ± 8% |
| Thickness Uniformity | σ/mean ≤ 4% |
| Doping Level | 8.2E+15 cm-3 |
| Doping Tolerance | ± 12% |
| Doping Uniformity | σ/mean ≤ 6% |
| Epi Defects | |
| Total Killer Defects | ≤2 /cm2 |
| Surface Quality | |
| Edge Exclusion | 5 mm |
| Scratches | ≤ 1 × wafer diameter cumulative length |
| Surface Roughness | Ra ≤ 0.5 nm |
*N-type epi layers are usually preceded by an n-type, 1E18 cm-3, 1.0 μm buffer layer
* Please provide the desired specification for us to check if you need customization.
Customer Success Story: NASA uses custom-made SiC epitaxial wafers and SiC substrates supplied by NANOSSR to develop high temperature and smart silicon carbide electronics and sensors.
Customization
Customized SiC epi-wafer products can be made to meet customer's requirements and specifications. Both semi-insulating and N-type SiC substrates are available. The epitaxial SiC layer can also be grown with the CVD process to be either N-type or P-type with controlled doping concentration and layer thickness. Contact us today to discuss your requirements with our scientists and engineers.
